Figure 1: GaAs-MeSFET Powermodul in MMIC Technologie
MMIC- technology (Monolithic Microwave Integrated Circuit) is a semiconductor process technology. It can be used to obtain active elements on the same silicon substrate. These circuits can be used up to very high frequencies.
GaAs-MESFETs are more often used by radar sets in solid state high power amplifiers.
|Silicium- bipolar and CMOS||<6 GHz||Very mature, commercially available, good CAD support.||BJT: high amplifications, small tolerances, Silicium substratum: dielectric with high losses. Very high mask costs for custom-designed MMICs. Suitable for mixedly analog/digital wirings.|
|Silicium-Germanium- bipolar (Si-Ge)||<10 GHz||In short time on high level developed. CAD support is under construction.||Very complex and expensive process. Suitable for mixedly analog/digital wirings.|
|GaAs-MESFET||<10 GHz||Mature, commercial well available for custom-designed MMICs. Good CAD support.||Simple technology: economical for custom-designed wirings with small quantities. Suitable for high power amplifiers.|
|GaAs-hetero-bipolar transistors (HBT)||<20 GHz||In commercial introduction. CAD support is under construction.||Suitable for fastest digital circuits, oscillators and power amplifiers.|
|Indium-phosphid- HEMT (InP)||<100 GHz||In commercial introduction. CAD support is under construction.||InP-HEMT: best microwave qualities for small signals and low noise.|
|Indium-phosphid-HBT (InP)||<230 GHz||In commercial introduction.||Suitable for fastest digital circuits.|
Table 1: Overview MMIC- Technologies (with the state of 2003)